Giant Dirac point shift of graphene phototransistors by doped silicon substrate current
Graphene is a promising new material for photodetectors due to its excellent optical properties and high-speed response. However, graphene-based phototransistors have low responsivity due to the weak light absorption of graphene. We have observed a giant Dirac point shift upon white light illuminati...
Main Authors: | Masaaki Shimatani, Shinpei Ogawa, Daisuke Fujisawa, Satoshi Okuda, Yasushi Kanai, Takao Ono, Kazuhiko Matsumoto |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2016-03-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4944622 |
Similar Items
-
Graphene Plasmonics in Sensor Applications: A Review
by: Shinpei Ogawa, et al.
Published: (2020-06-01) -
Giant Nonlocality Near the Dirac Point in Graphene
by: Abanin, D. A., et al.
Published: (2017) -
Effect of graphene on plasmonic metasurfaces at infrared wavelengths
by: Shinpei Ogawa, et al.
Published: (2013-11-01) -
Graphene as an Imaging Platform of Charged Molecules
by: Shota Ushiba, et al.
Published: (2018-03-01) -
Extraordinary Optical Transmission by Hybrid Phonon–Plasmon Polaritons Using hBN Embedded in Plasmonic Nanoslits
by: Shinpei Ogawa, et al.
Published: (2021-06-01)