Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and Channels

Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and Channels

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented model predicts different operation modes and characteristics of DG MOSE...

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Bibliographic Details
Main Authors: Xingye Zhou, Jian Zhang, Lining Zhang, Chenyue Ma, Xing Zhang, Jin He, Mansun Chan
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2010-04-01
Series:Sensors & Transducers
Subjects:
Generic compact model
Double-gate (DG) MOSFET
Operation modes
Doped
Undoped
Online Access:http://www.sensorsportal.com/HTML/DIGEST/april_2010/P_604.pdf
id doaj-cbebcc6ffc4e4e3cbceb1a222b9513e3
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spelling doaj-cbebcc6ffc4e4e3cbceb1a222b9513e32020-11-24T22:33:38ZengIFSA Publishing, S.L.Sensors & Transducers2306-85151726-54792010-04-011154108115Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and ChannelsXingye Zhou0Jian Zhang1Lining Zhang2Chenyue Ma3Xing Zhang4Jin He5Mansun Chan6Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, P. R. ChinaInstitute of Microelectronics, School of EECS, Peking University, Beijing 100871, P. R. ChinaInstitute of Microelectronics, School of EECS, Peking University, Beijing 100871, P. R. ChinaInstitute of Microelectronics, School of EECS, Peking University, Beijing 100871, P. R. ChinaKey Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, P. R. ChinaKey Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, P. R. ChinaDepartment of ECE, Hong Kong University of Science & Technology, Kowloon, Hong KongIn this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented model predicts different operation modes and characteristics of DG MOSEETs with channels from heavily doped to intrinsic case, which are well verified by the 2-D numerical simulator. http://www.sensorsportal.com/HTML/DIGEST/april_2010/P_604.pdfGeneric compact modelDouble-gate (DG) MOSFETOperation modesDopedUndoped
collection DOAJ
language English
format Article
sources DOAJ
author Xingye Zhou
Jian Zhang
Lining Zhang
Chenyue Ma
Xing Zhang
Jin He
Mansun Chan
spellingShingle Xingye Zhou
Jian Zhang
Lining Zhang
Chenyue Ma
Xing Zhang
Jin He
Mansun Chan
Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and Channels
Sensors & Transducers
Generic compact model
Double-gate (DG) MOSFET
Operation modes
Doped
Undoped
author_facet Xingye Zhou
Jian Zhang
Lining Zhang
Chenyue Ma
Xing Zhang
Jin He
Mansun Chan
author_sort Xingye Zhou
title Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and Channels
title_short Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and Channels
title_full Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and Channels
title_fullStr Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and Channels
title_full_unstemmed Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and Channels
title_sort generic compact model of double-gate mosfets applicable to different operation modes and channels
publisher IFSA Publishing, S.L.
series Sensors & Transducers
issn 2306-8515
1726-5479
publishDate 2010-04-01
description In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented model predicts different operation modes and characteristics of DG MOSEETs with channels from heavily doped to intrinsic case, which are well verified by the 2-D numerical simulator.
topic Generic compact model
Double-gate (DG) MOSFET
Operation modes
Doped
Undoped
url http://www.sensorsportal.com/HTML/DIGEST/april_2010/P_604.pdf
work_keys_str_mv AT xingyezhou genericcompactmodelofdoublegatemosfetsapplicabletodifferentoperationmodesandchannels
AT jianzhang genericcompactmodelofdoublegatemosfetsapplicabletodifferentoperationmodesandchannels
AT liningzhang genericcompactmodelofdoublegatemosfetsapplicabletodifferentoperationmodesandchannels
AT chenyuema genericcompactmodelofdoublegatemosfetsapplicabletodifferentoperationmodesandchannels
AT xingzhang genericcompactmodelofdoublegatemosfetsapplicabletodifferentoperationmodesandchannels
AT jinhe genericcompactmodelofdoublegatemosfetsapplicabletodifferentoperationmodesandchannels
AT mansunchan genericcompactmodelofdoublegatemosfetsapplicabletodifferentoperationmodesandchannels
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