Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm−3, a value that is solely li...

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Bibliographic Details
Main Authors: Jaber Derakhshandeh, Negin Golshani, Wiebe de Boer, Tom L. M. Scholtes, Agata Sakic, Lis K. Nanver
Format: Article
Language:English
Published: MDPI AG 2011-12-01
Series:Materials
Subjects:
silicon epitaxy
high-resistivity epi-layers
arsenic auto-doping
arsenic segregation
charged-particle detection
diode capacitance
photodiodes
Online Access:http://www.mdpi.com/1996-1944/4/12/2092/

Internet

http://www.mdpi.com/1996-1944/4/12/2092/

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