Investigation of displacement damage to vertical-cavity surface-emitting red lasers due to 1 MeV electron radiation

• Main Authors: J. W. Chen, Y. D. Li, M. Heini, B. K. Liu, Q. Q. Lei, Q. Guo, L. Wen, D. Zhou, W. Lu, C. F. He, A. Aierke
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2020-11-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/5.0029695
• ISSN: 2158-3226

The effects of displacement damage due to 1 MeV electron radiation on 680 nm and 850 nm vertical-cavity surface-emitting lasers (VCSELs) were experimentally investigated. The displacement damage dose was calculated using the MULASSIS tool, where it was found that radiation significantly affects the threshold current of VCSELs. The threshold current damage factor is 2.46 × 10−18 cm2/e for 680 nm VCSELs and 1.48 × 10−18 cm2/e for 850 nm VCSELs. In addition, the power intensity distribution and light output power degradation were characterized to evaluate the radiation hardness of VCSELs. An understanding of the performance degradation of VCSELs under electron exposure would be useful in optimizing their applications in hostile environments.