Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

SnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and c...

Full description

Bibliographic Details
Main Authors:	Jun-Young Cho, Muhammad Siyar, Woo Chan Jin, Euyheon Hwang, Seung-Hwan Bae, Seong-Hyeon Hong, Miyoung Kim, Chan Park
Format:	Article
Language:	English
Published:	MDPI AG 2019-11-01
Series:	Materials
Subjects:	thermoelectric tin selenide solid solution te substitution spark plasma sintering
Online Access:	https://www.mdpi.com/1996-1944/12/23/3854

id	doaj-c93dbefa97e6436fb832142d7bc6c81a
record_format	Article
spelling	doaj-c93dbefa97e6436fb832142d7bc6c81a2020-11-25T01:39:56ZengMDPI AGMaterials1996-19442019-11-011223385410.3390/ma12233854ma12233854Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid SolutionJun-Young Cho0Muhammad Siyar1Woo Chan Jin2Euyheon Hwang3Seung-Hwan Bae4Seong-Hyeon Hong5Miyoung Kim6Chan Park7Department of Materials Science and Engineering, Seoul National University, Seoul 08826, KoreaSchool of Chemical & Materials Engineering, National University of Sciences and Technology, Islamabad H–12, PakistanDepartment of Materials Science and Engineering, Seoul National University, Seoul 08826, KoreaSKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, KoreaDepartment of Nano Science and Engineering, Kyungnam University, Changwon 51767, KoreaDepartment of Materials Science and Engineering, Seoul National University, Seoul 08826, KoreaDepartment of Materials Science and Engineering, Seoul National University, Seoul 08826, KoreaDepartment of Materials Science and Engineering, Seoul National University, Seoul 08826, KoreaSnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and cost of fabricating a single crystal. It is highly desirable to improve the properties of polycrystalline SnSe whose TE properties are still not near to that of single crystal SnSe. In this study, in order to control the TE properties of polycrystalline SnSe, polycrystalline SnSe−SnTe solid solutions were fabricated, and the effect of the solid solution on the electrical transport and TE properties was investigated. The SnSe<sub>1−x</sub>Te<sub>x</sub> samples were fabricated using mechanical alloying and spark plasma sintering. X-ray diffraction (XRD) analyses revealed that the solubility limit of Te in SnSe<sub>1−x</sub>Te<sub>x</sub> is somewhere between x = 0.3 and 0.5. With increasing Te content, the electrical conductivity was increased due to the increase of carrier concentration, while the lattice thermal conductivity was suppressed by the increased amount of phonon scattering. The change of carrier concentration and electrical conductivity is explained using the measured band gap energy and the calculated band structure. The change of thermal conductivity is explained using the change of lattice thermal conductivity from the increased amount of phonon scattering at the point defect sites. A ZT of ~0.78 was obtained at 823 K from SnSe<sub>0.7</sub>Te<sub>0.3</sub>, which is an ~11% improvement compared to that of SnSe.https://www.mdpi.com/1996-1944/12/23/3854thermoelectrictin selenidesolid solutionte substitutionspark plasma sintering
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Jun-Young Cho Muhammad Siyar Woo Chan Jin Euyheon Hwang Seung-Hwan Bae Seong-Hyeon Hong Miyoung Kim Chan Park
spellingShingle	Jun-Young Cho Muhammad Siyar Woo Chan Jin Euyheon Hwang Seung-Hwan Bae Seong-Hyeon Hong Miyoung Kim Chan Park Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution Materials thermoelectric tin selenide solid solution te substitution spark plasma sintering
author_facet	Jun-Young Cho Muhammad Siyar Woo Chan Jin Euyheon Hwang Seung-Hwan Bae Seong-Hyeon Hong Miyoung Kim Chan Park
author_sort	Jun-Young Cho
title	Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution
title_short	Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution
title_full	Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution
title_fullStr	Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution
title_full_unstemmed	Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution
title_sort	electrical transport and thermoelectric properties of snse–snte solid solution
publisher	MDPI AG
series	Materials
issn	1996-1944
publishDate	2019-11-01
description	SnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and cost of fabricating a single crystal. It is highly desirable to improve the properties of polycrystalline SnSe whose TE properties are still not near to that of single crystal SnSe. In this study, in order to control the TE properties of polycrystalline SnSe, polycrystalline SnSe−SnTe solid solutions were fabricated, and the effect of the solid solution on the electrical transport and TE properties was investigated. The SnSe<sub>1−x</sub>Te<sub>x</sub> samples were fabricated using mechanical alloying and spark plasma sintering. X-ray diffraction (XRD) analyses revealed that the solubility limit of Te in SnSe<sub>1−x</sub>Te<sub>x</sub> is somewhere between x = 0.3 and 0.5. With increasing Te content, the electrical conductivity was increased due to the increase of carrier concentration, while the lattice thermal conductivity was suppressed by the increased amount of phonon scattering. The change of carrier concentration and electrical conductivity is explained using the measured band gap energy and the calculated band structure. The change of thermal conductivity is explained using the change of lattice thermal conductivity from the increased amount of phonon scattering at the point defect sites. A ZT of ~0.78 was obtained at 823 K from SnSe<sub>0.7</sub>Te<sub>0.3</sub>, which is an ~11% improvement compared to that of SnSe.
topic	thermoelectric tin selenide solid solution te substitution spark plasma sintering
url	https://www.mdpi.com/1996-1944/12/23/3854
work_keys_str_mv	AT junyoungcho electricaltransportandthermoelectricpropertiesofsnsesntesolidsolution AT muhammadsiyar electricaltransportandthermoelectricpropertiesofsnsesntesolidsolution AT woochanjin electricaltransportandthermoelectricpropertiesofsnsesntesolidsolution AT euyheonhwang electricaltransportandthermoelectricpropertiesofsnsesntesolidsolution AT seunghwanbae electricaltransportandthermoelectricpropertiesofsnsesntesolidsolution AT seonghyeonhong electricaltransportandthermoelectricpropertiesofsnsesntesolidsolution AT miyoungkim electricaltransportandthermoelectricpropertiesofsnsesntesolidsolution AT chanpark electricaltransportandthermoelectricpropertiesofsnsesntesolidsolution
_version_	1725048277011791872

Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

Similar Items