Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system

Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system

This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-...

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Bibliographic Details
Main Authors: A. Domdey, K. M. Hafkemeyer, W. H. Krautschneider, D. Schroeder
Format: Article
Language:deu
Published: Copernicus Publications 2008-05-01
Series:Advances in Radio Science
Online Access:http://www.adv-radio-sci.net/6/205/2008/ars-6-205-2008.pdf
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spelling doaj-c83aadce7ec44c78afd34a532b5d53e72020-11-25T01:36:35ZdeuCopernicus PublicationsAdvances in Radio Science 1684-99651684-99732008-05-016205207Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test systemA. DomdeyK. M. HafkemeyerW. H. KrautschneiderD. SchroederThis article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time. http://www.adv-radio-sci.net/6/205/2008/ars-6-205-2008.pdf
collection DOAJ
language deu
format Article
sources DOAJ
author A. Domdey
K. M. Hafkemeyer
W. H. Krautschneider
D. Schroeder
spellingShingle A. Domdey
K. M. Hafkemeyer
W. H. Krautschneider
D. Schroeder
Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system
Advances in Radio Science
author_facet A. Domdey
K. M. Hafkemeyer
W. H. Krautschneider
D. Schroeder
author_sort A. Domdey
title Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system
title_short Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system
title_full Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system
title_fullStr Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system
title_full_unstemmed Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system
title_sort simultaneous large-scale reliability analysis of ultra-thin mos gate dielectrics using an automated test system
publisher Copernicus Publications
series Advances in Radio Science
issn 1684-9965
1684-9973
publishDate 2008-05-01
description This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time.
url http://www.adv-radio-sci.net/6/205/2008/ars-6-205-2008.pdf
work_keys_str_mv AT adomdey simultaneouslargescalereliabilityanalysisofultrathinmosgatedielectricsusinganautomatedtestsystem
AT kmhafkemeyer simultaneouslargescalereliabilityanalysisofultrathinmosgatedielectricsusinganautomatedtestsystem
AT whkrautschneider simultaneouslargescalereliabilityanalysisofultrathinmosgatedielectricsusinganautomatedtestsystem
AT dschroeder simultaneouslargescalereliabilityanalysisofultrathinmosgatedielectricsusinganautomatedtestsystem
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