Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system
This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | deu |
| Published: |
Copernicus Publications
2008-05-01
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| Series: | Advances in Radio Science |
| Online Access: | http://www.adv-radio-sci.net/6/205/2008/ars-6-205-2008.pdf |
| Summary: | This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time. |
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| ISSN: | 1684-9965 1684-9973 |