Comparative Analysis of 6T, 7T, 8T, 9T, and 10T Realistic CNTFET Based SRAM
CMOS technology below 10 nm faces fundamental limits which restricts its applicability for future electronic application mainly in terms of size, power consumption, and speed. In digital electronics, memory components play a very significant role. SRAM, due to its unique ability to retain data, is o...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2017-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2017/4575013 |