Comparative Analysis of 6T, 7T, 8T, 9T, and 10T Realistic CNTFET Based SRAM

• Main Authors: Shital Joshi, Umar Alabawi
• Format: Article
• Language: English
• Published: Hindawi Limited 2017-01-01
• Series: Journal of Nanotechnology
• Online Access: http://dx.doi.org/10.1155/2017/4575013

CMOS technology below 10 nm faces fundamental limits which restricts its applicability for future electronic application mainly in terms of size, power consumption, and speed. In digital electronics, memory components play a very significant role. SRAM, due to its unique ability to retain data, is one of the most popular memory elements used in most of the digital devices. With aggressive technology scaling, the design of SRAM is seriously challenged in terms of delay, noise margin, and stability. This paper compares the performance of various CNTFET based SRAM cell topologies like 6T, 7T, 8T, 9T, and 10T cell with respect to static noise margin (SNM), write margin (WM), read delay, and power consumption. To consider the nonidealities of CNTFET, variations in tube diameter and effect of metallic tubes are considered for various structures with respect to various performance metrics like SNM, WM, read delay, and power consumption.