Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate

Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate

In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrica...

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Bibliographic Details
Main Authors: Kiyeol Kwak, Kyoungah Cho, Sangsig Kim
Format: Article
Language:English
Published: MDPI AG 2010-10-01
Series:Sensors
Subjects:
pn heterojunction photodiode
FET
optical sensor
plastic substrate
nanowire
Online Access:http://www.mdpi.com/1424-8220/10/10/9118/

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