Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate

In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrica...

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Main Authors:	Kiyeol Kwak, Kyoungah Cho, Sangsig Kim
Format:	Article
Language:	English
Published:	MDPI AG 2010-10-01
Series:	Sensors
Subjects:	pn heterojunction photodiode FET optical sensor plastic substrate nanowire
Online Access:	http://www.mdpi.com/1424-8220/10/10/9118/

id	doaj-c7cf7b6a3b494a8eab71a283a4970a20
record_format	Article
spelling	doaj-c7cf7b6a3b494a8eab71a283a4970a202020-11-24T21:47:08ZengMDPI AGSensors1424-82202010-10-0110109118912610.3390/s101009118Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic SubstrateKiyeol KwakKyoungah ChoSangsig KimIn this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter’s photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of −9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V. http://www.mdpi.com/1424-8220/10/10/9118/pn heterojunction photodiodeFEToptical sensorplastic substratenanowire
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Kiyeol Kwak Kyoungah Cho Sangsig Kim
spellingShingle	Kiyeol Kwak Kyoungah Cho Sangsig Kim Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate Sensors pn heterojunction photodiode FET optical sensor plastic substrate nanowire
author_facet	Kiyeol Kwak Kyoungah Cho Sangsig Kim
author_sort	Kiyeol Kwak
title	Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
title_short	Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
title_full	Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
title_fullStr	Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
title_full_unstemmed	Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
title_sort	characterization of a photodiode coupled with a si nanowire-fet on a plastic substrate
publisher	MDPI AG
series	Sensors
issn	1424-8220
publishDate	2010-10-01
description	In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter’s photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of −9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.
topic	pn heterojunction photodiode FET optical sensor plastic substrate nanowire
url	http://www.mdpi.com/1424-8220/10/10/9118/
work_keys_str_mv	AT kiyeolkwak characterizationofaphotodiodecoupledwithasinanowirefetonaplasticsubstrate AT kyoungahcho characterizationofaphotodiodecoupledwithasinanowirefetonaplasticsubstrate AT sangsigkim characterizationofaphotodiodecoupledwithasinanowirefetonaplasticsubstrate
_version_	1725899118909325312

Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate

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