Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films

Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films

Se-containing precursor films with two different compositions were prepared by magnetron sputtering from and targets, and then were selenized using Se vapor. The effects of precursor composition and selenization temperature on the film properties were investigated. The results show that Se phase p...

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Main Authors: Jiang Liu, Da-Ming Zhuang, Ming-Jie Cao, Chen-Yue Wang, Min Xie, Xiao-Long Li
Format: Article
Language:English
Published: Hindawi Limited 2012-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2012/149210
id doaj-c73a9049082742dda696cd93199ed019
record_format Article
spelling doaj-c73a9049082742dda696cd93199ed0192020-11-24T23:02:30ZengHindawi LimitedInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/149210149210Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor FilmsJiang Liu0Da-Ming Zhuang1Ming-Jie Cao2Chen-Yue Wang3Min Xie4Xiao-Long Li5Department of Mechanical Engineering, Tsinghua University, Beijing 100084, ChinaDepartment of Mechanical Engineering, Tsinghua University, Beijing 100084, ChinaDepartment of Mechanical Engineering, Tsinghua University, Beijing 100084, ChinaDepartment of Mechanical Engineering, Tsinghua University, Beijing 100084, ChinaDepartment of Mechanical Engineering, Tsinghua University, Beijing 100084, ChinaDepartment of Mechanical Engineering, Tsinghua University, Beijing 100084, ChinaSe-containing precursor films with two different compositions were prepared by magnetron sputtering from and targets, and then were selenized using Se vapor. The effects of precursor composition and selenization temperature on the film properties were investigated. The results show that Se phase plays a critical role in film growth and electrical properties of CIGS films. The Cu-rich films exhibit different surface morphology and better crystallinity, as compared to the Cu-poor films. All the CIGS films exhibit p-type conductivity. The resistivity of the Cu-rich films is about three orders of magnitude lower than that of the Cu-poor films, which is attributed to the presence of p-type highly conductive Se phase.http://dx.doi.org/10.1155/2012/149210
collection DOAJ
language English
format Article
sources DOAJ
author Jiang Liu
Da-Ming Zhuang
Ming-Jie Cao
Chen-Yue Wang
Min Xie
Xiao-Long Li
spellingShingle Jiang Liu
Da-Ming Zhuang
Ming-Jie Cao
Chen-Yue Wang
Min Xie
Xiao-Long Li
Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films
International Journal of Photoenergy
author_facet Jiang Liu
Da-Ming Zhuang
Ming-Jie Cao
Chen-Yue Wang
Min Xie
Xiao-Long Li
author_sort Jiang Liu
title Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films
title_short Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films
title_full Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films
title_fullStr Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films
title_full_unstemmed Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films
title_sort preparation and characterization of cu(in,ga)se2 thin films by selenization of cu0.8ga0.2 and in2se3 precursor films
publisher Hindawi Limited
series International Journal of Photoenergy
issn 1110-662X
1687-529X
publishDate 2012-01-01
description Se-containing precursor films with two different compositions were prepared by magnetron sputtering from and targets, and then were selenized using Se vapor. The effects of precursor composition and selenization temperature on the film properties were investigated. The results show that Se phase plays a critical role in film growth and electrical properties of CIGS films. The Cu-rich films exhibit different surface morphology and better crystallinity, as compared to the Cu-poor films. All the CIGS films exhibit p-type conductivity. The resistivity of the Cu-rich films is about three orders of magnitude lower than that of the Cu-poor films, which is attributed to the presence of p-type highly conductive Se phase.
url http://dx.doi.org/10.1155/2012/149210
work_keys_str_mv AT jiangliu preparationandcharacterizationofcuingase2thinfilmsbyselenizationofcu08ga02andin2se3precursorfilms
AT damingzhuang preparationandcharacterizationofcuingase2thinfilmsbyselenizationofcu08ga02andin2se3precursorfilms
AT mingjiecao preparationandcharacterizationofcuingase2thinfilmsbyselenizationofcu08ga02andin2se3precursorfilms
AT chenyuewang preparationandcharacterizationofcuingase2thinfilmsbyselenizationofcu08ga02andin2se3precursorfilms
AT minxie preparationandcharacterizationofcuingase2thinfilmsbyselenizationofcu08ga02andin2se3precursorfilms
AT xiaolongli preparationandcharacterizationofcuingase2thinfilmsbyselenizationofcu08ga02andin2se3precursorfilms
_version_ 1725636467035734016

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