The barrier height (BH) and ideality factor (n) distribution in identically prepared Al/ Bi3Ti4O12/n-Si (MFS) structures
In this study, the values of barrier heights and ideality factors of identically fabricated Au/BTO/n-Si (MFS) type SBDs (60 dots) have been obtained from their intercepts and slopes linear parts of forward bias lnI vs V plots at room temperature. Experimental results show that these two important p...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Gazi University
2017-09-01
|
| Series: | Gazi Üniversitesi Fen Bilimleri Dergisi |
| Subjects: | |
| Online Access: | http://dergipark.gov.tr/download/article-file/341501 |
| Summary: | In this study, the values of barrier heights and ideality factors of identically fabricated Au/BTO/n-Si (MFS) type SBDs (60 dots) have been obtained from their intercepts and slopes linear parts of
forward bias lnI vs V plots at room temperature. Experimental results show that these two important parameters (BH and n) of the diodes change from diode to diode even if they are identically prepared on same quarter n-Si wafer. These results are clearly important to understand the physical origin of such non-ideal behavior so that it can be controlled in future such device applications. High values of n can be attributed to the existence of a wide distribution of low Schottky barrier height (SBH) patches, interfacial BTO layer and surface states. According to us, the BH differences over the contact area are a result of inhomogeneity interfacial layer thickness or composition and BH between metal, grain boundaries and semiconductor and non-uniformityof the interfacial charges or dislocations. |
|---|---|
| ISSN: | 2147-9526 2147-9526 |