Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K

Electrical performance of self-directed channel (SDC) ion-conducting memristors which use Ag and Cu as the mobile ion source are compared over the temperature range of 6 K to 300 K. The Cu-based SDC memristors operate at temperatures as low as 6 K, whereas Ag-based SDC memristors are damaged if oper...

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Main Authors:	Kolton Drake, Tonglin Lu, Md. Kamrul H. Majumdar, Kristy A. Campbell
Format:	Article
Language:	English
Published:	MDPI AG 2019-09-01
Series:	Micromachines
Subjects:	chalcogenide electrochemical metallization cell electrochemical metallization (ecm) ion conduction memristor self-directed channel (sdc)
Online Access:	https://www.mdpi.com/2072-666X/10/10/663

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spelling	doaj-c6696a9d2a034272b744fc2df5da940c2020-11-25T01:42:14ZengMDPI AGMicromachines2072-666X2019-09-01101066310.3390/mi10100663mi10100663Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 KKolton Drake0Tonglin Lu1Md. Kamrul H. Majumdar2Kristy A. Campbell3Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725-2075, USADepartment of Electrical and Computer Engineering, Boise State University, Boise, ID 83725-2075, USADepartment of Electrical and Computer Engineering, Boise State University, Boise, ID 83725-2075, USADepartment of Electrical and Computer Engineering, Boise State University, Boise, ID 83725-2075, USAElectrical performance of self-directed channel (SDC) ion-conducting memristors which use Ag and Cu as the mobile ion source are compared over the temperature range of 6 K to 300 K. The Cu-based SDC memristors operate at temperatures as low as 6 K, whereas Ag-based SDC memristors are damaged if operated below 125 K. It is also observed that Cu reversibly diffuses into the active Ge<sub>2</sub>Se<sub>3</sub> layer during normal device shelf-life, thus changing the state of a Cu-based memristor over time. This was not observed for the Ag-based SDC devices. The response of each device type to sinusoidal excitation is provided and shows that the Cu-based devices exhibit hysteresis lobe collapse at lower frequencies than the Ag-based devices. In addition, the pulsed response of the device types is presented.https://www.mdpi.com/2072-666X/10/10/663chalcogenideelectrochemical metallization cellelectrochemical metallization (ecm)ion conductionmemristorself-directed channel (sdc)
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Kolton Drake Tonglin Lu Md. Kamrul H. Majumdar Kristy A. Campbell
spellingShingle	Kolton Drake Tonglin Lu Md. Kamrul H. Majumdar Kristy A. Campbell Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K Micromachines chalcogenide electrochemical metallization cell electrochemical metallization (ecm) ion conduction memristor self-directed channel (sdc)
author_facet	Kolton Drake Tonglin Lu Md. Kamrul H. Majumdar Kristy A. Campbell
author_sort	Kolton Drake
title	Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K
title_short	Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K
title_full	Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K
title_fullStr	Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K
title_full_unstemmed	Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K
title_sort	comparison of the electrical response of cu and ag ion-conducting sdc memristors over the temperature range 6 k to 300 k
publisher	MDPI AG
series	Micromachines
issn	2072-666X
publishDate	2019-09-01
description	Electrical performance of self-directed channel (SDC) ion-conducting memristors which use Ag and Cu as the mobile ion source are compared over the temperature range of 6 K to 300 K. The Cu-based SDC memristors operate at temperatures as low as 6 K, whereas Ag-based SDC memristors are damaged if operated below 125 K. It is also observed that Cu reversibly diffuses into the active Ge<sub>2</sub>Se<sub>3</sub> layer during normal device shelf-life, thus changing the state of a Cu-based memristor over time. This was not observed for the Ag-based SDC devices. The response of each device type to sinusoidal excitation is provided and shows that the Cu-based devices exhibit hysteresis lobe collapse at lower frequencies than the Ag-based devices. In addition, the pulsed response of the device types is presented.
topic	chalcogenide electrochemical metallization cell electrochemical metallization (ecm) ion conduction memristor self-directed channel (sdc)
url	https://www.mdpi.com/2072-666X/10/10/663
work_keys_str_mv	AT koltondrake comparisonoftheelectricalresponseofcuandagionconductingsdcmemristorsoverthetemperaturerange6kto300k AT tonglinlu comparisonoftheelectricalresponseofcuandagionconductingsdcmemristorsoverthetemperaturerange6kto300k AT mdkamrulhmajumdar comparisonoftheelectricalresponseofcuandagionconductingsdcmemristorsoverthetemperaturerange6kto300k AT kristyacampbell comparisonoftheelectricalresponseofcuandagionconductingsdcmemristorsoverthetemperaturerange6kto300k
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Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K

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