Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits

Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits

Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction-bipolar-transis...

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Main Authors: Kwang-Jow Gan, Jeng-Jong Lu, Wen-Kuan Yeh, Yaw-Hwang Chen, Yan-Wun Chen
Format: Article
Language:English
Published: Elsevier 2016-06-01
Series:Engineering Science and Technology, an International Journal
Subjects:
Multiple-valued logic
Negative differential resistance circuit
BiCMOS process
Peak-control method
Online Access:http://www.sciencedirect.com/science/article/pii/S2215098615300902
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spelling doaj-c662fbaacfa04e48909a8eec020911372020-11-24T22:19:20ZengElsevierEngineering Science and Technology, an International Journal2215-09862016-06-0119288889310.1016/j.jestch.2015.12.007Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuitsKwang-Jow Gan0Jeng-Jong Lu1Wen-Kuan Yeh2Yaw-Hwang Chen3Yan-Wun Chen4Department of Electrical Engineering, National Chiayi University, No. 300, Syuefu Rd., Chiayi City 60004, TaiwanDepartment of Mechanical Engineering, Kun Shan University, No.195, Kunda Rd., YongKang Dist., Tainan City 71003, TaiwanDepartment of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nanzih Dist., Kaohsiung 81148, TaiwanDepartment of Electronic Engineering, Kun Shan University, No.195, Kunda Rd., YongKang Dist., Tainan City 71003, TaiwanDepartment of Electronic Engineering, Kun Shan University, No.195, Kunda Rd., YongKang Dist., Tainan City 71003, TaiwanThree different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction-bipolar-transistor (HBT) devices, can be implemented by using a standard BiCMOS process. These MVL circuits are designed based on the triggering-pulse control, saw-tooth input signal, and peak-control methods, respectively. However, there are some transient states existing between the multiple stable levels for the first two methods. These states might affect the circuit function in practical application. As a result, our proposed peak-control method for the MVL design can be used to overcome these transient states.http://www.sciencedirect.com/science/article/pii/S2215098615300902Multiple-valued logicNegative differential resistance circuitBiCMOS processPeak-control method
collection DOAJ
language English
format Article
sources DOAJ
author Kwang-Jow Gan
Jeng-Jong Lu
Wen-Kuan Yeh
Yaw-Hwang Chen
Yan-Wun Chen
spellingShingle Kwang-Jow Gan
Jeng-Jong Lu
Wen-Kuan Yeh
Yaw-Hwang Chen
Yan-Wun Chen
Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits
Engineering Science and Technology, an International Journal
Multiple-valued logic
Negative differential resistance circuit
BiCMOS process
Peak-control method
author_facet Kwang-Jow Gan
Jeng-Jong Lu
Wen-Kuan Yeh
Yaw-Hwang Chen
Yan-Wun Chen
author_sort Kwang-Jow Gan
title Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits
title_short Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits
title_full Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits
title_fullStr Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits
title_full_unstemmed Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits
title_sort multiple-valued logic design based on the multiple-peak bicmos-ndr circuits
publisher Elsevier
series Engineering Science and Technology, an International Journal
issn 2215-0986
publishDate 2016-06-01
description Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction-bipolar-transistor (HBT) devices, can be implemented by using a standard BiCMOS process. These MVL circuits are designed based on the triggering-pulse control, saw-tooth input signal, and peak-control methods, respectively. However, there are some transient states existing between the multiple stable levels for the first two methods. These states might affect the circuit function in practical application. As a result, our proposed peak-control method for the MVL design can be used to overcome these transient states.
topic Multiple-valued logic
Negative differential resistance circuit
BiCMOS process
Peak-control method
url http://www.sciencedirect.com/science/article/pii/S2215098615300902
work_keys_str_mv AT kwangjowgan multiplevaluedlogicdesignbasedonthemultiplepeakbicmosndrcircuits
AT jengjonglu multiplevaluedlogicdesignbasedonthemultiplepeakbicmosndrcircuits
AT wenkuanyeh multiplevaluedlogicdesignbasedonthemultiplepeakbicmosndrcircuits
AT yawhwangchen multiplevaluedlogicdesignbasedonthemultiplepeakbicmosndrcircuits
AT yanwunchen multiplevaluedlogicdesignbasedonthemultiplepeakbicmosndrcircuits
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