Saturation Gain Characteristics of Quantum-Well Semiconductor Optical Amplifier

Recently, there is an increasing interest onquantum well (QW) semiconductor optical amplifier in optical communications and optical signal processing applications. This paper addresses the dependence of saturation power on QW structure parameters. Expressions are given to assess this dependency and...

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Bibliographic Details
Main Author: Alhuda A. Al-mfrji
Format: Article
Language:English
Published: Al-Nahrain Journal for Engineering Sciences 2011-09-01
Series:مجلة النهرين للعلوم الهندسية
Subjects:
Online Access:https://nahje.com/index.php/main/article/view/619
Description
Summary:Recently, there is an increasing interest onquantum well (QW) semiconductor optical amplifier in optical communications and optical signal processing applications. This paper addresses the dependence of saturation power on QW structure parameters. Expressions are given to assess this dependency and the results indicate that the saturation power is a decreasing function of number of wells, well thickness, and amplifier length and it is almost independent of barrier thickness.
ISSN:2521-9154
2521-9162