Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Despite being an indirect bandgap material, germanium (Ge) recently appeared as a material of choice for low power consumption optical link on silicon. Thanks to a low energy difference between direct and indirect energy bandgap, optical transitions around the direct gap can be used to achieve stron...

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Bibliographic Details
Main Authors: Marris-Morini Delphine, Chaisakul Papichaya, Rouifed Mohamed-Saïd, Frigerio Jacopo, Chrastina Daniel, Isella Giovanni, Edmond Samson, Le Roux Xavier, Coudevylle Jean-René, Vivien Laurent
Format: Article
Language:English
Published: De Gruyter 2013-10-01
Series:Nanophotonics
Subjects:
quantum wells
germanium
silicon
quantum confined stark effect
electroluminescence
epitaxial growth
Online Access:https://doi.org/10.1515/nanoph-2013-0018

Internet

https://doi.org/10.1515/nanoph-2013-0018

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