Comparison of Two Layout Options for 110-GHz CMOS LC Cross-Coupled Oscillators
Two 110-GHz oscillators have been developed in 65-nm CMOS technology. To study the effect of layout on the circuit performance, both oscillators had the same LC cross-coupled topology but different layout schemes of the circuit. The oscillator with the conventional cross-coupled design (OSC1), showe...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
The Korean Institute of Electromagnetic Engineering and Science
2018-04-01
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| Series: | Journal of the Korean Institute of Electromagnetic Engineering and Science |
| Subjects: | |
| Online Access: | http://www.jees.kr/upload/pdf/jees-2018-18-2-141.pdf |
| Summary: | Two 110-GHz oscillators have been developed in 65-nm CMOS technology. To study the effect of layout on the circuit performance, both oscillators had the same LC cross-coupled topology but different layout schemes of the circuit. The oscillator with the conventional cross-coupled design (OSC1), showed an output power of −3.9 dBm at 111 GHz with a phase noise of −75 dBc/Hz at 1-MHz offset. On the other hand, OSC2, with a modified cross-coupled line layout, generated an output power of −2.0 dBm at 117 GHz with a phase noise of −77 dBc/Hz at 1-MHz offset. The result indicates that the optimized layout can improve key oscillator performances such as oscillation frequency and output power. |
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| ISSN: | 2234-8409 2234-8395 |