UWB-MMIC Matrix Distributed Low Noise Amplifier

• Main Authors: Moustapha El Bakkali, Said Elkhaldi, Intissar Hamzi, Abdelhafid Marroun, Naima Amar Touhami
• Format: Article
• Language: English
• Published: MDPI AG 2020-12-01
• Series: Proceedings
• Subjects: Matrix Distributed LNA; MMIC; GaAs; pHEMT; Noise Figure
• Online Access: https://www.mdpi.com/2504-3900/63/1/52

In this paper, a 3.1–11 GHz ultra-wideband low noise amplifier with low noise figure, high power gain S₂₁, low reverse gain S₁₂, and high linearity using the OMMIC ED02AH process, which employs a 0.18 μm Pseudomorphic High Electron Mobility Transistor is presented. This Low Noise Amplifier (LNA) was designed with the Advanced Design System simulator in distributed matrix architecture. For the low noise amplifier, four stages were used obtaining a good input/output matching. An average power gain S₂₁ of 11.6 dB with a gain ripple of ±0.6 dB and excellent noise figure of 3.55 to 4.25 dB is obtained in required band with a power dissipation of 48 mW under a supply voltage of 2 V. The input compression point 1 dB and third-order input intercept point are −1.5 and 23 dBm respectively. The core layout size is 1.8 × 1.2 mm².