Planar sensors for dosimetry in mixed gamma-neutron fields

Circular silicon p-i-n diodes fabricated by planar technology have been studied. The diodes allow simultaneously measurements of neutron doses and gamma dose rates in mixed fields. The neutron dose is determined from the shift of the forward current voltage characteristic. Gamma dose is obtained f...

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Main Authors: I. E. Anokhin, O. S. Zinets, A. B. Rosenfeld, M. Yudelev, V. L. Perevertailo
Format: Article
Language:English
Published: Institute for Nuclear Research, National Academy of Sciences of Ukraine 2007-03-01
Series:Âderna Fìzika ta Energetika
Online Access:http://jnpae.kinr.kiev.ua/19(1)/Articles_PDF/jnpae-2007-1(19)-0103-Anokhin.pdf
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spelling doaj-c4f95e1320fb462194b4ae1f3b21bf522020-11-24T23:23:50ZengInstitute for Nuclear Research, National Academy of Sciences of UkraineÂderna Fìzika ta Energetika1818-331X2074-05652007-03-0181(19)103108Planar sensors for dosimetry in mixed gamma-neutron fieldsI. E. Anokhin0O. S. Zinets1A. B. Rosenfeld2M. Yudelev3V. L. Perevertailo4Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineCenter for Medical Radiation Physics, University, Wollongong, AustraliaCenter for Medical Radiation Physics, University, Wollongong, AustraliaInstitute of Micro Devices, National Academy of Sciences of Ukraine, Kyiv, UkraineCircular silicon p-i-n diodes fabricated by planar technology have been studied. The diodes allow simultaneously measurements of neutron doses and gamma dose rates in mixed fields. The neutron dose is determined from the shift of the forward current voltage characteristic. Gamma dose is obtained from measurements of the ionization current in the photodiode mode. Small sizes of sensors (few millimeters) allow measuring the spatial distribution of radiation fields. http://jnpae.kinr.kiev.ua/19(1)/Articles_PDF/jnpae-2007-1(19)-0103-Anokhin.pdf
collection DOAJ
language English
format Article
sources DOAJ
author I. E. Anokhin
O. S. Zinets
A. B. Rosenfeld
M. Yudelev
V. L. Perevertailo
spellingShingle I. E. Anokhin
O. S. Zinets
A. B. Rosenfeld
M. Yudelev
V. L. Perevertailo
Planar sensors for dosimetry in mixed gamma-neutron fields
Âderna Fìzika ta Energetika
author_facet I. E. Anokhin
O. S. Zinets
A. B. Rosenfeld
M. Yudelev
V. L. Perevertailo
author_sort I. E. Anokhin
title Planar sensors for dosimetry in mixed gamma-neutron fields
title_short Planar sensors for dosimetry in mixed gamma-neutron fields
title_full Planar sensors for dosimetry in mixed gamma-neutron fields
title_fullStr Planar sensors for dosimetry in mixed gamma-neutron fields
title_full_unstemmed Planar sensors for dosimetry in mixed gamma-neutron fields
title_sort planar sensors for dosimetry in mixed gamma-neutron fields
publisher Institute for Nuclear Research, National Academy of Sciences of Ukraine
series Âderna Fìzika ta Energetika
issn 1818-331X
2074-0565
publishDate 2007-03-01
description Circular silicon p-i-n diodes fabricated by planar technology have been studied. The diodes allow simultaneously measurements of neutron doses and gamma dose rates in mixed fields. The neutron dose is determined from the shift of the forward current voltage characteristic. Gamma dose is obtained from measurements of the ionization current in the photodiode mode. Small sizes of sensors (few millimeters) allow measuring the spatial distribution of radiation fields.
url http://jnpae.kinr.kiev.ua/19(1)/Articles_PDF/jnpae-2007-1(19)-0103-Anokhin.pdf
work_keys_str_mv AT ieanokhin planarsensorsfordosimetryinmixedgammaneutronfields
AT oszinets planarsensorsfordosimetryinmixedgammaneutronfields
AT abrosenfeld planarsensorsfordosimetryinmixedgammaneutronfields
AT myudelev planarsensorsfordosimetryinmixedgammaneutronfields
AT vlperevertailo planarsensorsfordosimetryinmixedgammaneutronfields
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