Planar sensors for dosimetry in mixed gamma-neutron fields
Circular silicon p-i-n diodes fabricated by planar technology have been studied. The diodes allow simultaneously measurements of neutron doses and gamma dose rates in mixed fields. The neutron dose is determined from the shift of the forward current voltage characteristic. Gamma dose is obtained f...
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Institute for Nuclear Research, National Academy of Sciences of Ukraine
2007-03-01
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doaj-c4f95e1320fb462194b4ae1f3b21bf522020-11-24T23:23:50ZengInstitute for Nuclear Research, National Academy of Sciences of UkraineÂderna Fìzika ta Energetika1818-331X2074-05652007-03-0181(19)103108Planar sensors for dosimetry in mixed gamma-neutron fieldsI. E. Anokhin0O. S. Zinets1A. B. Rosenfeld2M. Yudelev3V. L. Perevertailo4Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineCenter for Medical Radiation Physics, University, Wollongong, AustraliaCenter for Medical Radiation Physics, University, Wollongong, AustraliaInstitute of Micro Devices, National Academy of Sciences of Ukraine, Kyiv, UkraineCircular silicon p-i-n diodes fabricated by planar technology have been studied. The diodes allow simultaneously measurements of neutron doses and gamma dose rates in mixed fields. The neutron dose is determined from the shift of the forward current voltage characteristic. Gamma dose is obtained from measurements of the ionization current in the photodiode mode. Small sizes of sensors (few millimeters) allow measuring the spatial distribution of radiation fields. http://jnpae.kinr.kiev.ua/19(1)/Articles_PDF/jnpae-2007-1(19)-0103-Anokhin.pdf |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
I. E. Anokhin O. S. Zinets A. B. Rosenfeld M. Yudelev V. L. Perevertailo |
spellingShingle |
I. E. Anokhin O. S. Zinets A. B. Rosenfeld M. Yudelev V. L. Perevertailo Planar sensors for dosimetry in mixed gamma-neutron fields Âderna Fìzika ta Energetika |
author_facet |
I. E. Anokhin O. S. Zinets A. B. Rosenfeld M. Yudelev V. L. Perevertailo |
author_sort |
I. E. Anokhin |
title |
Planar sensors for dosimetry in mixed gamma-neutron fields |
title_short |
Planar sensors for dosimetry in mixed gamma-neutron fields |
title_full |
Planar sensors for dosimetry in mixed gamma-neutron fields |
title_fullStr |
Planar sensors for dosimetry in mixed gamma-neutron fields |
title_full_unstemmed |
Planar sensors for dosimetry in mixed gamma-neutron fields |
title_sort |
planar sensors for dosimetry in mixed gamma-neutron fields |
publisher |
Institute for Nuclear Research, National Academy of Sciences of Ukraine |
series |
Âderna Fìzika ta Energetika |
issn |
1818-331X 2074-0565 |
publishDate |
2007-03-01 |
description |
Circular silicon p-i-n diodes fabricated by planar technology have been studied. The diodes allow simultaneously
measurements of neutron doses and gamma dose rates in mixed fields. The neutron dose is determined from the shift of
the forward current voltage characteristic. Gamma dose is obtained from measurements of the ionization current in the
photodiode mode. Small sizes of sensors (few millimeters) allow measuring the spatial distribution of radiation fields. |
url |
http://jnpae.kinr.kiev.ua/19(1)/Articles_PDF/jnpae-2007-1(19)-0103-Anokhin.pdf |
work_keys_str_mv |
AT ieanokhin planarsensorsfordosimetryinmixedgammaneutronfields AT oszinets planarsensorsfordosimetryinmixedgammaneutronfields AT abrosenfeld planarsensorsfordosimetryinmixedgammaneutronfields AT myudelev planarsensorsfordosimetryinmixedgammaneutronfields AT vlperevertailo planarsensorsfordosimetryinmixedgammaneutronfields |
_version_ |
1725563390756126720 |