Planar sensors for dosimetry in mixed gamma-neutron fields
Circular silicon p-i-n diodes fabricated by planar technology have been studied. The diodes allow simultaneously measurements of neutron doses and gamma dose rates in mixed fields. The neutron dose is determined from the shift of the forward current voltage characteristic. Gamma dose is obtained f...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2007-03-01
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| Series: | Âderna Fìzika ta Energetika |
| Online Access: | http://jnpae.kinr.kiev.ua/19(1)/Articles_PDF/jnpae-2007-1(19)-0103-Anokhin.pdf |
| Summary: | Circular silicon p-i-n diodes fabricated by planar technology have been studied. The diodes allow simultaneously
measurements of neutron doses and gamma dose rates in mixed fields. The neutron dose is determined from the shift of
the forward current voltage characteristic. Gamma dose is obtained from measurements of the ionization current in the
photodiode mode. Small sizes of sensors (few millimeters) allow measuring the spatial distribution of radiation fields. |
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| ISSN: | 1818-331X 2074-0565 |