Performance Recovery of Silicon-Avalanche- Photodiode Electron Detector by Low-Temperature Annealing

Performance Recovery of Silicon-Avalanche- Photodiode Electron Detector by Low-Temperature Annealing

We report that the silicon avalanche photodiode (APD) for electron detection almost fully recovers from the damage caused by electron irradiation by annealing. With the electron irradiation at an energy of 8 keV, a prominent increase of the non-amplified component of the dark current was observed, a...

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Bibliographic Details
Main Authors: Taizo Kawauchi, Shunji Kishimoto, Katsuyuki Fukutani
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Annealing
avalanche photodiode
dark current
electron detector
pulse height analysis
recovery
Online Access:https://ieeexplore.ieee.org/document/6601677/

Internet

https://ieeexplore.ieee.org/document/6601677/

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