β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications

β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications

Bibliographic Details
Main Authors: Mengwei Si, Lingming Yang, Hong Zhou, Peide D. Ye
Format: Article
Language:English
Published: American Chemical Society 2017-10-01
Series:ACS Omega
Online Access:http://dx.doi.org/10.1021/acsomega.7b01289
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spelling doaj-c4ddb33696934f1f8dfa0c606fc7e08f2020-11-25T03:49:34ZengAmerican Chemical SocietyACS Omega2470-13432017-10-012107136714010.1021/acsomega.7b01289β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic ApplicationsMengwei SiLingming YangHong ZhouPeide D. Yehttp://dx.doi.org/10.1021/acsomega.7b01289
collection DOAJ
language English
format Article
sources DOAJ
author Mengwei Si
Lingming Yang
Hong Zhou
Peide D. Ye
spellingShingle Mengwei Si
Lingming Yang
Hong Zhou
Peide D. Ye
β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
ACS Omega
author_facet Mengwei Si
Lingming Yang
Hong Zhou
Peide D. Ye
author_sort Mengwei Si
title β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
title_short β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
title_full β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
title_fullStr β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
title_full_unstemmed β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
title_sort β‑ga2o3 nanomembrane negative capacitance field-effect transistors with steep subthreshold slope for wide band gap logic applications
publisher American Chemical Society
series ACS Omega
issn 2470-1343
publishDate 2017-10-01
url http://dx.doi.org/10.1021/acsomega.7b01289
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AT lingmingyang bga2o3nanomembranenegativecapacitancefieldeffecttransistorswithsteepsubthresholdslopeforwidebandgaplogicapplications
AT hongzhou bga2o3nanomembranenegativecapacitancefieldeffecttransistorswithsteepsubthresholdslopeforwidebandgaplogicapplications
AT peidedye bga2o3nanomembranenegativecapacitancefieldeffecttransistorswithsteepsubthresholdslopeforwidebandgaplogicapplications
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