β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications

β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications

Bibliographic Details
Main Authors: Mengwei Si, Lingming Yang, Hong Zhou, Peide D. Ye
Format: Article
Language:English
Published: American Chemical Society 2017-10-01
Series:ACS Omega
Online Access:http://dx.doi.org/10.1021/acsomega.7b01289
Description
ISSN:2470-1343

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