Investigation of In Situ Boron-Doping in SiGe Source/Drain Layer Growth for PMOS Devices
Embedded SiGe (eSiGe) source/drain (S/D) was studied to enhance PMOS performance. Detailed investigations concerning the effect of GeH4 and B2H6 gas flow rate on the resultant Boron-doping of the SiGe layer (on a 40 nm patterned wafer) were carried out. Various SiGeB epitaxial growth experiments wer...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2015/537696 |