CUSTOM RELAXATION INDUCED IMPURITY PHOTOCONDUCTIVITY IN THE UNITED AII BVI and AIII BV
Two types of non-standard relaxation induced impurity photoconductivity (IIP) observed in photoconductors CdS, ZnSe, GaAs and others, depending on the kinetic characteristics of the traps are described. In one case, at the stage of post flashing monotonic decay which is typical for relaxation associ...
| Main Authors: | , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Daghestan State Technical University
2016-07-01
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| Series: | Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki |
| Subjects: | |
| Online Access: | https://vestnik.dgtu.ru/jour/article/view/83 |