CUSTOM RELAXATION INDUCED IMPURITY PHOTOCONDUCTIVITY IN THE UNITED AII BVI and AIII BV

CUSTOM RELAXATION INDUCED IMPURITY PHOTOCONDUCTIVITY IN THE UNITED AII BVI and AIII BV

Two types of non-standard relaxation induced impurity photoconductivity (IIP) observed in photoconductors CdS, ZnSe, GaAs and others, depending on the kinetic characteristics of the traps are described. In one case, at the stage of post flashing monotonic decay which is typical for relaxation associ...

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Bibliographic Details
Main Authors: L. B. Atlukhanova, F. S. Gabibov, M. A. Rizakhanov
Format: Article
Language:Russian
Published: Daghestan State Technical University 2016-07-01
Series:Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki
Subjects:
the induced photoconductivity
electronic trap
center of recombination
ionising energy
section of capture
optically an active trap
photoionization
macroinhomogeneities
Online Access:https://vestnik.dgtu.ru/jour/article/view/83

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https://vestnik.dgtu.ru/jour/article/view/83

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