Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
Reduction of power consumption for magnetization reversal in spintronic memory devices is of great importance. Here, Munetaet al. report the gate electric-field assisted control of the magnetic anisotropy of the density of states using quantum size effect in GaMnAs.
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2017-05-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/ncomms15387 |