Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet

Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet

Reduction of power consumption for magnetization reversal in spintronic memory devices is of great importance. Here, Munetaet al. report the gate electric-field assisted control of the magnetic anisotropy of the density of states using quantum size effect in GaMnAs.

Bibliographic Details
Main Authors: Iriya Muneta, Toshiki Kanaki, Shinobu Ohya, Masaaki Tanaka
Format: Article
Language:English
Published: Nature Publishing Group 2017-05-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms15387
id doaj-c3d93914213244d0bea559af94fe9baa
record_format Article
spelling doaj-c3d93914213244d0bea559af94fe9baa2021-05-11T07:28:45ZengNature Publishing GroupNature Communications2041-17232017-05-01811810.1038/ncomms15387Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnetIriya Muneta0Toshiki Kanaki1Shinobu Ohya2Masaaki Tanaka3Department of Electrical Engineering and Information Systems, The University of TokyoDepartment of Electrical Engineering and Information Systems, The University of TokyoDepartment of Electrical Engineering and Information Systems, The University of TokyoDepartment of Electrical Engineering and Information Systems, The University of TokyoReduction of power consumption for magnetization reversal in spintronic memory devices is of great importance. Here, Munetaet al. report the gate electric-field assisted control of the magnetic anisotropy of the density of states using quantum size effect in GaMnAs.https://doi.org/10.1038/ncomms15387
collection DOAJ
language English
format Article
sources DOAJ
author Iriya Muneta
Toshiki Kanaki
Shinobu Ohya
Masaaki Tanaka
spellingShingle Iriya Muneta
Toshiki Kanaki
Shinobu Ohya
Masaaki Tanaka
Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
Nature Communications
author_facet Iriya Muneta
Toshiki Kanaki
Shinobu Ohya
Masaaki Tanaka
author_sort Iriya Muneta
title Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
title_short Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
title_full Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
title_fullStr Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
title_full_unstemmed Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
title_sort artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2017-05-01
description Reduction of power consumption for magnetization reversal in spintronic memory devices is of great importance. Here, Munetaet al. report the gate electric-field assisted control of the magnetic anisotropy of the density of states using quantum size effect in GaMnAs.
url https://doi.org/10.1038/ncomms15387
work_keys_str_mv AT iriyamuneta artificialcontrolofthebiasvoltagedependenceoftunnellinganisotropicmagnetoresistanceusingquantizationinasinglecrystalferromagnet
AT toshikikanaki artificialcontrolofthebiasvoltagedependenceoftunnellinganisotropicmagnetoresistanceusingquantizationinasinglecrystalferromagnet
AT shinobuohya artificialcontrolofthebiasvoltagedependenceoftunnellinganisotropicmagnetoresistanceusingquantizationinasinglecrystalferromagnet
AT masaakitanaka artificialcontrolofthebiasvoltagedependenceoftunnellinganisotropicmagnetoresistanceusingquantizationinasinglecrystalferromagnet
_version_ 1721452171721965568

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