The Inversion Layer Evolution According to the Report of Substrat Doping /Gate Doping of a MSP OS Structure
The inversion layer in the sample containing MOS structure is a very significant parameter for the operation of these components. In this question we summons it self interested in the simulation of the capacitance of MSPOS structure. We propose a numerical model, based on the resolution of the Poiss...
Main Authors: | H. Dib, Z. Benamara, Z. Kari |
---|---|
Format: | Article |
Language: | English |
Published: |
IFSA Publishing, S.L.
2014-05-01
|
Series: | Sensors & Transducers |
Subjects: | |
Online Access: | http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_491.pdf |
Similar Items
-
Interface States Densities Effect at SiO2/ Polysilicon and SiO2/ Monosilicon Surfaces on N-polysilicon /Oxide/ P-Monosilicon Capacitance
by: H. Dib, et al.
Published: (2014-05-01) -
TEM and DFT study of basal-plane inversion boundaries in SnO2-doped ZnO
by: Ribić Vesna, et al.
Published: (2021-01-01) -
Fermi-Level Tuning of G-Doped Layers
by: Avto Tavkhelidze, et al.
Published: (2021-02-01) -
Techno-doping aspekty prawne i etyczne Techno - doping legal and ethical aspects
by: Renata Kopczyk
Published: (2016-09-01) -
A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
by: Tao Tian, et al.
Published: (2019-01-01)