Electrophysical characteristics of initial and irradiated GаAsP LEDs structures

Electrophysical characteristics of initial and irradiated GаAsP LEDs structures

ight emitting diodes based on gallium arsenide-phosphide solid solutions were studied. Negative differential resistance regions were identified at lower temperatures T ≤ 130 K. Irradiation of diodes by electrons (E = 2 MeV) leads to the increase in the differential resistance, change in the contact...

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Bibliographic Details
Main Authors: O. V. Konoreva, P. G. Litovchenko, O. I. Radkevych, V. M. Popov, V. P. Tartachnyk, V. V. Shlapatska
Format: Article
Language:English
Published: Institute for Nuclear Research, National Academy of Sciences of Ukraine 2019-06-01
Series:Âderna Fìzika ta Energetika
Subjects:
GaAsP
light emitting diode
negative differential resistance
Online Access:http://jnpae.kinr.kiev.ua/20.2/html/20.2.0164.html

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