A Complication of Negative Resistance Circuits Generated by Two Novel Algorithms
There are two algorithms to generate a negative-resistance device which exhibits either a type-N shaped V-1 characteristic similar to a tunnel diode, or a type-S shaped V-1 characteristic similar to a four layered pnpn diode. We present here a selection of these circuits using bipolar, JFET or MOSFE...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510213495 |