Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate

Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate

The growth of gallium nitride-based nanopillar-shaped crystals on the multicrystalline silicon substrate that is widely employed in solar cells is presented here for the first time. The nanopillar-shaped crystals are successfully grown on the multicrystalline substrate in a manner similar to the str...

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Main Authors: Atomu Fujiwara, Yuichi Sato
Format: Article
Language:English
Published: AIP Publishing LLC 2018-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5014994
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spelling doaj-c28dabe75d7e4e39bf5a8178b43930202020-11-24T21:12:53ZengAIP Publishing LLCAIP Advances2158-32262018-01-0181015004015004-510.1063/1.5014994020801ADVProperties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrateAtomu Fujiwara0Yuichi Sato1Department of Mathematical Science and Electrical-Electronic-Computer Engineering, Graduate School of Engineering Science, Akita University, 1-1 Tegata-gakuen, Akita 010-8502, JapanDepartment of Mathematical Science and Electrical-Electronic-Computer Engineering, Graduate School of Engineering Science, Akita University, 1-1 Tegata-gakuen, Akita 010-8502, JapanThe growth of gallium nitride-based nanopillar-shaped crystals on the multicrystalline silicon substrate that is widely employed in solar cells is presented here for the first time. The nanopillar-shaped crystals are successfully grown on the multicrystalline substrate in a manner similar to the structures grown on other substrates. Structural variations and a highly enhanced band edge emission in the photoluminescence spectrum have been observed using germanium doping.http://dx.doi.org/10.1063/1.5014994
collection DOAJ
language English
format Article
sources DOAJ
author Atomu Fujiwara
Yuichi Sato
spellingShingle Atomu Fujiwara
Yuichi Sato
Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate
AIP Advances
author_facet Atomu Fujiwara
Yuichi Sato
author_sort Atomu Fujiwara
title Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate
title_short Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate
title_full Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate
title_fullStr Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate
title_full_unstemmed Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate
title_sort properties of gan-based nanopillar-shaped crystals grown on a multicrystalline si substrate
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2018-01-01
description The growth of gallium nitride-based nanopillar-shaped crystals on the multicrystalline silicon substrate that is widely employed in solar cells is presented here for the first time. The nanopillar-shaped crystals are successfully grown on the multicrystalline substrate in a manner similar to the structures grown on other substrates. Structural variations and a highly enhanced band edge emission in the photoluminescence spectrum have been observed using germanium doping.
url http://dx.doi.org/10.1063/1.5014994
work_keys_str_mv AT atomufujiwara propertiesofganbasednanopillarshapedcrystalsgrownonamulticrystallinesisubstrate
AT yuichisato propertiesofganbasednanopillarshapedcrystalsgrownonamulticrystallinesisubstrate
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