Nonlinear Thermoelectroelastic Analysis of III-N Semiconductor Devices
The diffusion-drift electron transport description is combined with finite deformation theory to model thermoelectroelastic behaviors in piezoelectric semiconductors under conditions when the mechanical strains/displacements are not small so that the usual assumption of linearity cannot be justified...
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| Format: | Article |
| Language: | English |
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IEEE
2017-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/7998606/ |