Effect of the Pressure of Reaction Gases on the Growth of Single-Crystal Graphene on the Inner Surfaces of Copper Pockets
Single-crystal graphene has attracted much attention due to its excellent electrical properties in recent years, and many growth methods have been proposed, including the copper pockets method. In the copper pockets method, a piece of copper foil is folded into a pocket and put into a chemical vapor...
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doaj-c24331e2a66743c7937d99ceb515b9882020-12-15T00:00:15ZengMDPI AGMicromachines2072-666X2020-12-01111101110110.3390/mi11121101Effect of the Pressure of Reaction Gases on the Growth of Single-Crystal Graphene on the Inner Surfaces of Copper PocketsKaiqiang Yang0Jianlong Liu1Ruirui Jiang2Yubin Gong3Baoqing Zeng4Zichuan Yi5Qingguo Gao6Jianjun Yang7Feng Chi8Liming Liu9School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaZhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, ChinaZhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, ChinaZhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, ChinaZhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, ChinaZhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, ChinaSingle-crystal graphene has attracted much attention due to its excellent electrical properties in recent years, and many growth methods have been proposed, including the copper pockets method. In the copper pockets method, a piece of copper foil is folded into a pocket and put into a chemical vapor deposition (CVD) system for the growth of graphene. The dynamic balance of evaporation and deposition of copper on the inner surfaces of the copper pockets avoids high surface roughness caused by the evaporation of copper in open space, such as the outer surfaces of copper pockets. Much lower partial pressure of methane in the copper pockets and lower surface roughness reduce the nucleation density of graphene and increase the size of single-crystal graphene. It is found that the growth pressure is closely related to the size of single-crystal graphene prepared by the copper pockets method; the higher the growth pressure, the larger the size of single-crystal graphene. It is also found that the growth pressure has an effect on the inner surface roughness of the copper pockets, but the effect is not significant. The main factor affecting the size of the single-crystal graphene is the change in the volume of the copper pockets caused by the change in the growth pressure, and the volume of the copper pockets determines the content of methane in the copper pockets. According to the above law, the size of single-crystal graphene prepared by the copper pockets method can be enlarged by increasing the growth pressure. The size of single-crystal graphene can be enlarged in a wide range as the growth pressure can be increased in a wide range. In our experiments, when the growth pressure reached 450 Pa, single-crystal graphene with a diameter of 450 <inline-formula><math display="inline"><semantics><mrow><mrow><mi mathvariant="sans-serif">μ</mi><mi mathvariant="normal">m</mi></mrow></mrow></semantics></math></inline-formula> was prepared.https://www.mdpi.com/2072-666X/11/12/1101single-crystal graphenecopper pocketgrowth pressurenucleation densitysize |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Kaiqiang Yang Jianlong Liu Ruirui Jiang Yubin Gong Baoqing Zeng Zichuan Yi Qingguo Gao Jianjun Yang Feng Chi Liming Liu |
spellingShingle |
Kaiqiang Yang Jianlong Liu Ruirui Jiang Yubin Gong Baoqing Zeng Zichuan Yi Qingguo Gao Jianjun Yang Feng Chi Liming Liu Effect of the Pressure of Reaction Gases on the Growth of Single-Crystal Graphene on the Inner Surfaces of Copper Pockets Micromachines single-crystal graphene copper pocket growth pressure nucleation density size |
author_facet |
Kaiqiang Yang Jianlong Liu Ruirui Jiang Yubin Gong Baoqing Zeng Zichuan Yi Qingguo Gao Jianjun Yang Feng Chi Liming Liu |
author_sort |
Kaiqiang Yang |
title |
Effect of the Pressure of Reaction Gases on the Growth of Single-Crystal Graphene on the Inner Surfaces of Copper Pockets |
title_short |
Effect of the Pressure of Reaction Gases on the Growth of Single-Crystal Graphene on the Inner Surfaces of Copper Pockets |
title_full |
Effect of the Pressure of Reaction Gases on the Growth of Single-Crystal Graphene on the Inner Surfaces of Copper Pockets |
title_fullStr |
Effect of the Pressure of Reaction Gases on the Growth of Single-Crystal Graphene on the Inner Surfaces of Copper Pockets |
title_full_unstemmed |
Effect of the Pressure of Reaction Gases on the Growth of Single-Crystal Graphene on the Inner Surfaces of Copper Pockets |
title_sort |
effect of the pressure of reaction gases on the growth of single-crystal graphene on the inner surfaces of copper pockets |
publisher |
MDPI AG |
series |
Micromachines |
issn |
2072-666X |
publishDate |
2020-12-01 |
description |
Single-crystal graphene has attracted much attention due to its excellent electrical properties in recent years, and many growth methods have been proposed, including the copper pockets method. In the copper pockets method, a piece of copper foil is folded into a pocket and put into a chemical vapor deposition (CVD) system for the growth of graphene. The dynamic balance of evaporation and deposition of copper on the inner surfaces of the copper pockets avoids high surface roughness caused by the evaporation of copper in open space, such as the outer surfaces of copper pockets. Much lower partial pressure of methane in the copper pockets and lower surface roughness reduce the nucleation density of graphene and increase the size of single-crystal graphene. It is found that the growth pressure is closely related to the size of single-crystal graphene prepared by the copper pockets method; the higher the growth pressure, the larger the size of single-crystal graphene. It is also found that the growth pressure has an effect on the inner surface roughness of the copper pockets, but the effect is not significant. The main factor affecting the size of the single-crystal graphene is the change in the volume of the copper pockets caused by the change in the growth pressure, and the volume of the copper pockets determines the content of methane in the copper pockets. According to the above law, the size of single-crystal graphene prepared by the copper pockets method can be enlarged by increasing the growth pressure. The size of single-crystal graphene can be enlarged in a wide range as the growth pressure can be increased in a wide range. In our experiments, when the growth pressure reached 450 Pa, single-crystal graphene with a diameter of 450 <inline-formula><math display="inline"><semantics><mrow><mrow><mi mathvariant="sans-serif">μ</mi><mi mathvariant="normal">m</mi></mrow></mrow></semantics></math></inline-formula> was prepared. |
topic |
single-crystal graphene copper pocket growth pressure nucleation density size |
url |
https://www.mdpi.com/2072-666X/11/12/1101 |
work_keys_str_mv |
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