Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte

Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte

Resistive switching memory cells were fabricated on a plastic substrate via inkjet printing (IJP) of a solid polymer electrolyte (SPE). Using the high contrast between the surface energy of a metal electrode and the substrate, a thin SPE film could be deposited over the electrode by IJP. The fabrica...

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Main Authors: Saumya R. Mohapatra, T. Tsuruoka, T. Hasegawa, K. Terabe, M. Aono
Format: Article
Language:English
Published: AIP Publishing LLC 2012-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4727742
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spelling doaj-c237ccca7f444c66b0c27e70ae70a9ed2020-11-25T01:04:38ZengAIP Publishing LLCAIP Advances2158-32262012-06-0122022144022144-710.1063/1.4727742044202ADVFlexible resistive switching memory using inkjet printing of a solid polymer electrolyteSaumya R. Mohapatra0T. Tsuruoka1T. Hasegawa2K. Terabe3M. Aono4International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanResistive switching memory cells were fabricated on a plastic substrate via inkjet printing (IJP) of a solid polymer electrolyte (SPE). Using the high contrast between the surface energy of a metal electrode and the substrate, a thin SPE film could be deposited over the electrode by IJP. The fabricated Ag/SPE/Pt cells showed bipolar resistive switching behavior under electrical bias in vacuum and in air, which is attributed to the formation and dissolution of a metal filament between the electrodes. From the standpoint of the switching mechanism, our cell can be referred to as a ‘gapless-type atomic switch’. The cells also exhibited stable switching behavior under substrate bending. This device fabrication technique has great potential for flexible switch/memory applications.http://dx.doi.org/10.1063/1.4727742
collection DOAJ
language English
format Article
sources DOAJ
author Saumya R. Mohapatra
T. Tsuruoka
T. Hasegawa
K. Terabe
M. Aono
spellingShingle Saumya R. Mohapatra
T. Tsuruoka
T. Hasegawa
K. Terabe
M. Aono
Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte
AIP Advances
author_facet Saumya R. Mohapatra
T. Tsuruoka
T. Hasegawa
K. Terabe
M. Aono
author_sort Saumya R. Mohapatra
title Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte
title_short Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte
title_full Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte
title_fullStr Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte
title_full_unstemmed Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte
title_sort flexible resistive switching memory using inkjet printing of a solid polymer electrolyte
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2012-06-01
description Resistive switching memory cells were fabricated on a plastic substrate via inkjet printing (IJP) of a solid polymer electrolyte (SPE). Using the high contrast between the surface energy of a metal electrode and the substrate, a thin SPE film could be deposited over the electrode by IJP. The fabricated Ag/SPE/Pt cells showed bipolar resistive switching behavior under electrical bias in vacuum and in air, which is attributed to the formation and dissolution of a metal filament between the electrodes. From the standpoint of the switching mechanism, our cell can be referred to as a ‘gapless-type atomic switch’. The cells also exhibited stable switching behavior under substrate bending. This device fabrication technique has great potential for flexible switch/memory applications.
url http://dx.doi.org/10.1063/1.4727742
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AT ttsuruoka flexibleresistiveswitchingmemoryusinginkjetprintingofasolidpolymerelectrolyte
AT thasegawa flexibleresistiveswitchingmemoryusinginkjetprintingofasolidpolymerelectrolyte
AT kterabe flexibleresistiveswitchingmemoryusinginkjetprintingofasolidpolymerelectrolyte
AT maono flexibleresistiveswitchingmemoryusinginkjetprintingofasolidpolymerelectrolyte
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