Enhancement of Photodetective Properties on Multilayered MoS<sub>2</sub> Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors

Photodetectors and display backplane transistors based on molybdenum disulfide (MoS<sub>2</sub>) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS<sub>2</sub> photodetector itself or emerging applicati...

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Main Authors: Seung Gi Seo, Jae Hyeon Ryu, Seung Yeob Kim, Jinheon Jeong, Sung Hun Jin
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/11/6/1586
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spelling doaj-c21fa63cb23b4fc682a3fa42f31fa6d32021-07-01T00:23:25ZengMDPI AGNanomaterials2079-49912021-06-01111586158610.3390/nano11061586Enhancement of Photodetective Properties on Multilayered MoS<sub>2</sub> Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical SensorsSeung Gi Seo0Jae Hyeon Ryu1Seung Yeob Kim2Jinheon Jeong3Sung Hun Jin4Department of Electronic Engineering, Incheon National University, Incheon 22012, KoreaDepartment of Electronic Engineering, Incheon National University, Incheon 22012, KoreaDepartment of Electronic Engineering, Incheon National University, Incheon 22012, KoreaDepartment of Electronic Engineering, Incheon National University, Incheon 22012, KoreaDepartment of Electronic Engineering, Incheon National University, Incheon 22012, KoreaPhotodetectors and display backplane transistors based on molybdenum disulfide (MoS<sub>2</sub>) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS<sub>2</sub> photodetector itself or emerging applications. In this study, to suggest a better insight into the photodetector performances of MoS<sub>2</sub> thin film transistors (TFTs), as photosensors for possible integrated system, we performed a comparative study on the photoresponse of MoS<sub>2</sub> and hydrogenated amorphous silicon (a-Si:H) TFTs. As a result, in the various wavelengths and optical power ranges, MoS<sub>2</sub> TFTs exhibit 2~4 orders larger photo responsivities and detectivities. The overall quantitative comparison of photoresponse in single device and inverters confirms a much better performance by the MoS<sub>2</sub> photodetectors. Furthermore, as a strategy to improve the field effect mobility and photoresponse of the MoS<sub>2</sub> TFTs, molecular doping via poly-L-lysine (PLL) treatment was applied to the MoS<sub>2</sub> TFTs. Transfer and output characteristics of the MoS<sub>2</sub> TFTs clearly show improved photocurrent generation under a wide range of illuminations (740~365 nm). These results provide useful insights for considering MoS<sub>2</sub> as a next-generation photodetector in flat panel displays and makes it more attractive due to the fact of its potential as a high-performance photodetector enabled by a novel doping technique.https://www.mdpi.com/2079-4991/11/6/1586a-Si:H TFTMoS<sub>2</sub> TFTphotodetectorcomparative studymolecular dopingpoly-L-lysine
collection DOAJ
language English
format Article
sources DOAJ
author Seung Gi Seo
Jae Hyeon Ryu
Seung Yeob Kim
Jinheon Jeong
Sung Hun Jin
spellingShingle Seung Gi Seo
Jae Hyeon Ryu
Seung Yeob Kim
Jinheon Jeong
Sung Hun Jin
Enhancement of Photodetective Properties on Multilayered MoS<sub>2</sub> Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors
Nanomaterials
a-Si:H TFT
MoS<sub>2</sub> TFT
photodetector
comparative study
molecular doping
poly-L-lysine
author_facet Seung Gi Seo
Jae Hyeon Ryu
Seung Yeob Kim
Jinheon Jeong
Sung Hun Jin
author_sort Seung Gi Seo
title Enhancement of Photodetective Properties on Multilayered MoS<sub>2</sub> Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors
title_short Enhancement of Photodetective Properties on Multilayered MoS<sub>2</sub> Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors
title_full Enhancement of Photodetective Properties on Multilayered MoS<sub>2</sub> Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors
title_fullStr Enhancement of Photodetective Properties on Multilayered MoS<sub>2</sub> Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors
title_full_unstemmed Enhancement of Photodetective Properties on Multilayered MoS<sub>2</sub> Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors
title_sort enhancement of photodetective properties on multilayered mos<sub>2</sub> thin film transistors via self-assembled poly-l-lysine treatment and their potential application in optical sensors
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2021-06-01
description Photodetectors and display backplane transistors based on molybdenum disulfide (MoS<sub>2</sub>) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS<sub>2</sub> photodetector itself or emerging applications. In this study, to suggest a better insight into the photodetector performances of MoS<sub>2</sub> thin film transistors (TFTs), as photosensors for possible integrated system, we performed a comparative study on the photoresponse of MoS<sub>2</sub> and hydrogenated amorphous silicon (a-Si:H) TFTs. As a result, in the various wavelengths and optical power ranges, MoS<sub>2</sub> TFTs exhibit 2~4 orders larger photo responsivities and detectivities. The overall quantitative comparison of photoresponse in single device and inverters confirms a much better performance by the MoS<sub>2</sub> photodetectors. Furthermore, as a strategy to improve the field effect mobility and photoresponse of the MoS<sub>2</sub> TFTs, molecular doping via poly-L-lysine (PLL) treatment was applied to the MoS<sub>2</sub> TFTs. Transfer and output characteristics of the MoS<sub>2</sub> TFTs clearly show improved photocurrent generation under a wide range of illuminations (740~365 nm). These results provide useful insights for considering MoS<sub>2</sub> as a next-generation photodetector in flat panel displays and makes it more attractive due to the fact of its potential as a high-performance photodetector enabled by a novel doping technique.
topic a-Si:H TFT
MoS<sub>2</sub> TFT
photodetector
comparative study
molecular doping
poly-L-lysine
url https://www.mdpi.com/2079-4991/11/6/1586
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