Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded

Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded

Abstract Deep ultraviolet AlGaN-based nanorod (NR) arrays were fabricated by nanoimprint lithography and top-down dry etching techniques from a fully structural LED wafer. Highly ordered periodic structural properties and morphology were confirmed by scanning electron microscopy and transmission ele...

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Main Authors: Shucheng Ge, Jiangping Dai, Na Gao, Shiqiang Lu, Penggang Li, Kai Huang, Bin Liu, Junyong Kang, Rong Zhang, Youdou Zheng
Format: Article
Language:English
Published: SpringerOpen 2019-05-01
Series:Nanoscale Research Letters
Subjects:
DUV AlGaN multi-quantum wells
Nanorod light-emitting diodes
Internal quantum efficiency
Light extraction
Online Access:http://link.springer.com/article/10.1186/s11671-019-3003-1
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spelling doaj-c10918848abf4f94acdd81e2f0ab07712020-11-25T02:57:41ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-05-011411710.1186/s11671-019-3003-1Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells EmbeddedShucheng Ge0Jiangping Dai1Na Gao2Shiqiang Lu3Penggang Li4Kai Huang5Bin Liu6Junyong Kang7Rong Zhang8Youdou Zheng9Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen UniversityJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing UniversityDepartment of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen UniversityDepartment of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen UniversityDepartment of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen UniversityDepartment of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen UniversityJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing UniversityDepartment of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen UniversityDepartment of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen UniversityJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing UniversityAbstract Deep ultraviolet AlGaN-based nanorod (NR) arrays were fabricated by nanoimprint lithography and top-down dry etching techniques from a fully structural LED wafer. Highly ordered periodic structural properties and morphology were confirmed by scanning electron microscopy and transmission electron microscopy. Compared with planar samples, cathodoluminescence measurement revealed that NR samples showed 1.92-fold light extraction efficiency (LEE) enhancement and a 12.2-fold internal quantum efficiency (IQE) enhancement for the emission from multi-quantum wells at approximately 277 nm. The LEE enhancement can be attributed to the well-fabricated nanostructured interface between the air and the epilayers. Moreover, the reduced quantum-confined stark effect accounted for the great enhancement in IQE.http://link.springer.com/article/10.1186/s11671-019-3003-1DUV AlGaN multi-quantum wellsNanorod light-emitting diodesInternal quantum efficiencyLight extraction
collection DOAJ
language English
format Article
sources DOAJ
author Shucheng Ge
Jiangping Dai
Na Gao
Shiqiang Lu
Penggang Li
Kai Huang
Bin Liu
Junyong Kang
Rong Zhang
Youdou Zheng
spellingShingle Shucheng Ge
Jiangping Dai
Na Gao
Shiqiang Lu
Penggang Li
Kai Huang
Bin Liu
Junyong Kang
Rong Zhang
Youdou Zheng
Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded
Nanoscale Research Letters
DUV AlGaN multi-quantum wells
Nanorod light-emitting diodes
Internal quantum efficiency
Light extraction
author_facet Shucheng Ge
Jiangping Dai
Na Gao
Shiqiang Lu
Penggang Li
Kai Huang
Bin Liu
Junyong Kang
Rong Zhang
Youdou Zheng
author_sort Shucheng Ge
title Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded
title_short Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded
title_full Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded
title_fullStr Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded
title_full_unstemmed Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded
title_sort optical performance of top-down fabricated algan nanorod arrays with multi-quantum wells embedded
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2019-05-01
description Abstract Deep ultraviolet AlGaN-based nanorod (NR) arrays were fabricated by nanoimprint lithography and top-down dry etching techniques from a fully structural LED wafer. Highly ordered periodic structural properties and morphology were confirmed by scanning electron microscopy and transmission electron microscopy. Compared with planar samples, cathodoluminescence measurement revealed that NR samples showed 1.92-fold light extraction efficiency (LEE) enhancement and a 12.2-fold internal quantum efficiency (IQE) enhancement for the emission from multi-quantum wells at approximately 277 nm. The LEE enhancement can be attributed to the well-fabricated nanostructured interface between the air and the epilayers. Moreover, the reduced quantum-confined stark effect accounted for the great enhancement in IQE.
topic DUV AlGaN multi-quantum wells
Nanorod light-emitting diodes
Internal quantum efficiency
Light extraction
url http://link.springer.com/article/10.1186/s11671-019-3003-1
work_keys_str_mv AT shuchengge opticalperformanceoftopdownfabricatedalgannanorodarrayswithmultiquantumwellsembedded
AT jiangpingdai opticalperformanceoftopdownfabricatedalgannanorodarrayswithmultiquantumwellsembedded
AT nagao opticalperformanceoftopdownfabricatedalgannanorodarrayswithmultiquantumwellsembedded
AT shiqianglu opticalperformanceoftopdownfabricatedalgannanorodarrayswithmultiquantumwellsembedded
AT penggangli opticalperformanceoftopdownfabricatedalgannanorodarrayswithmultiquantumwellsembedded
AT kaihuang opticalperformanceoftopdownfabricatedalgannanorodarrayswithmultiquantumwellsembedded
AT binliu opticalperformanceoftopdownfabricatedalgannanorodarrayswithmultiquantumwellsembedded
AT junyongkang opticalperformanceoftopdownfabricatedalgannanorodarrayswithmultiquantumwellsembedded
AT rongzhang opticalperformanceoftopdownfabricatedalgannanorodarrayswithmultiquantumwellsembedded
AT youdouzheng opticalperformanceoftopdownfabricatedalgannanorodarrayswithmultiquantumwellsembedded
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