On the Prediction of the Threshold Voltage Degradation in CMOS Technology Due to Bias-Temperature Instability
Currently, researchers face new challenges in order to compensate or even reduce the noxious phenomenon known as bias-temperature instability (BTI) that is present in modern metal-oxide-semiconductor (MOS) technologies, which negatively impacts the performance of semiconductor devices. BTI remains a...
Main Authors: | Alejandro Campos-Cruz, Guillermo Espinosa-Flores-Verdad, Alfonso Torres-Jacome, Esteban Tlelo-Cuautle |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-12-01
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Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/7/12/427 |
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