On the Prediction of the Threshold Voltage Degradation in CMOS Technology Due to Bias-Temperature Instability

On the Prediction of the Threshold Voltage Degradation in CMOS Technology Due to Bias-Temperature Instability

Currently, researchers face new challenges in order to compensate or even reduce the noxious phenomenon known as bias-temperature instability (BTI) that is present in modern metal-oxide-semiconductor (MOS) technologies, which negatively impacts the performance of semiconductor devices. BTI remains a...

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Bibliographic Details
Main Authors: Alejandro Campos-Cruz, Guillermo Espinosa-Flores-Verdad, Alfonso Torres-Jacome, Esteban Tlelo-Cuautle
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Electronics
Subjects:
MOS transistor
bias-temperature instability
NBTI
PBTI
interface traps
oxygen vacancies
numerical simulation
HSPICE
BSIM3v3
Online Access:https://www.mdpi.com/2079-9292/7/12/427

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https://www.mdpi.com/2079-9292/7/12/427

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