Analysis of temperature dependent electrical performance of Al/CuO/ITO Schottky barrier diode and explanation of inhomogeneous barrier heights by double Gaussian distribution
Here temperature dependent electrical properties of two differently synthesized CuO nanoparticles (hydrothermal (CuO (H)) and reflux (CuO (R))) based Schottky barrier diodes (SBDs) have been investigated. Both the materials based devices show an abnormal decrease in the ideality factor (η) and an in...
Main Authors: | Rajkumar Jana, Sayantan Sil, Arka Dey, Joydeep Datta, Partha Pratim Ray |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2018-12-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5066258 |
Similar Items
-
A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height
by: Benamara, Z., et al.
Published: (2022) -
An Accurate and Efficient Procedure for Schottky Barrier Height Extraction
by: Fu, Tz-Yu, et al.
Published: (2013) -
The Influences of Thermal and Surface Processes on Schottky Barrier Height
by: Feng-Ling Shiau, et al.
Published: (1995) -
Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning
by: Li, Xiaoli, et al.
Published: (2009) -
Study of Schottky Barrier Height of Metals/Indium Selenide interface
by: Yu-Ting Peng, et al.
Published: (2019)