Extended-wavelength InGaAsSb infrared unipolar barrier detectors
We presented an extended-wavelength InGaAsSb infrared unipolar barrier detector working at room temperature. The detector with GaSb lattice-matched InGaAsSb absorb layer and AlGaAsSb unipolar barrier can achieve high material quality and low dark current. The dark current density was 2.29×10-5 A/cm2...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5026839 |
| Summary: | We presented an extended-wavelength InGaAsSb infrared unipolar barrier detector working at room temperature. The detector with GaSb lattice-matched InGaAsSb absorb layer and AlGaAsSb unipolar barrier can achieve high material quality and low dark current. The dark current density was 2.29×10-5 A/cm2 at 0 bias at 77K. At room temperature the dark current at 0 bias was 4×10-3 A/cm2 and the R0A is high to 44 Ω · cm2. We fabricated the cone arrays in the InGaAsSb absorb layer to reduce the reflection of the radiation and extend the spectrum response to visible area. The extended-wavelength detector had the response from the wavelength of 0.4 μm. Further experiment showed the cone arrays also reduced the dark current of the detector at room temperature. |
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| ISSN: | 2158-3226 |