Extended-wavelength InGaAsSb infrared unipolar barrier detectors
We presented an extended-wavelength InGaAsSb infrared unipolar barrier detector working at room temperature. The detector with GaSb lattice-matched InGaAsSb absorb layer and AlGaAsSb unipolar barrier can achieve high material quality and low dark current. The dark current density was 2.29×10-5 A/cm2...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2018-09-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5026839 |