Modelling of an Esaki Tunnel Diode in a Circuit Simulator

Modelling of an Esaki Tunnel Diode in a Circuit Simulator

A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an interme...

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Main Authors: Nikhil M. Kriplani, Stephen Bowyer, Jennifer Huckaby, Michael B. Steer
Format: Article
Language:English
Published: Hindawi Limited 2011-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/2011/830182
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spelling doaj-beba2df3807441b4b6d7731c1523e8e62020-11-25T00:06:14ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50312011-01-01201110.1155/2011/830182830182Modelling of an Esaki Tunnel Diode in a Circuit SimulatorNikhil M. Kriplani0Stephen Bowyer1Jennifer Huckaby2Michael B. Steer3Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7914, USADepartment of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7914, USADepartment of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7914, USADepartment of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7914, USAA method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an intermediate state variable results in a physically realistic mathematical model that is not only moderately nonlinear and therefore robust, but also single-valued.http://dx.doi.org/10.1155/2011/830182
collection DOAJ
language English
format Article
sources DOAJ
author Nikhil M. Kriplani
Stephen Bowyer
Jennifer Huckaby
Michael B. Steer
spellingShingle Nikhil M. Kriplani
Stephen Bowyer
Jennifer Huckaby
Michael B. Steer
Modelling of an Esaki Tunnel Diode in a Circuit Simulator
Active and Passive Electronic Components
author_facet Nikhil M. Kriplani
Stephen Bowyer
Jennifer Huckaby
Michael B. Steer
author_sort Nikhil M. Kriplani
title Modelling of an Esaki Tunnel Diode in a Circuit Simulator
title_short Modelling of an Esaki Tunnel Diode in a Circuit Simulator
title_full Modelling of an Esaki Tunnel Diode in a Circuit Simulator
title_fullStr Modelling of an Esaki Tunnel Diode in a Circuit Simulator
title_full_unstemmed Modelling of an Esaki Tunnel Diode in a Circuit Simulator
title_sort modelling of an esaki tunnel diode in a circuit simulator
publisher Hindawi Limited
series Active and Passive Electronic Components
issn 0882-7516
1563-5031
publishDate 2011-01-01
description A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an intermediate state variable results in a physically realistic mathematical model that is not only moderately nonlinear and therefore robust, but also single-valued.
url http://dx.doi.org/10.1155/2011/830182
work_keys_str_mv AT nikhilmkriplani modellingofanesakitunneldiodeinacircuitsimulator
AT stephenbowyer modellingofanesakitunneldiodeinacircuitsimulator
AT jenniferhuckaby modellingofanesakitunneldiodeinacircuitsimulator
AT michaelbsteer modellingofanesakitunneldiodeinacircuitsimulator
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