Modelling of an Esaki Tunnel Diode in a Circuit Simulator
A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an interme...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2011-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2011/830182 |
| Summary: | A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an intermediate state variable results in a physically realistic mathematical model that is not only moderately nonlinear and therefore robust, but also single-valued. |
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| ISSN: | 0882-7516 1563-5031 |