Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices

Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices

We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high miscut, which stabilizes the growth of additional SrO at the bottom interface. We prove the success of...

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Bibliographic Details
Main Authors:	Felix V. E. Hensling, Hongchu Du, Nicolas Raab, Chun-Lin Jia, Joachim Mayer, Regina Dittmann
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2019-10-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.5125211

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