Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices
We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high miscut, which stabilizes the growth of additional SrO at the bottom interface. We prove the success of...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-10-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5125211 |