Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices

Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices

We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high miscut, which stabilizes the growth of additional SrO at the bottom interface. We prove the success of...

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Main Authors: Felix V. E. Hensling, Hongchu Du, Nicolas Raab, Chun-Lin Jia, Joachim Mayer, Regina Dittmann
Format: Article
Language:English
Published: AIP Publishing LLC 2019-10-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5125211
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spelling doaj-beae3b1ed765482aa7c4b82b2db055ba2020-11-24T21:37:01ZengAIP Publishing LLCAPL Materials2166-532X2019-10-01710101127101127-610.1063/1.5125211Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devicesFelix V. E. Hensling0Hongchu Du1Nicolas Raab2Chun-Lin Jia3Joachim Mayer4Regina Dittmann5PGI-7, Forschungszentrum Jülich GmbH, 52425 Jülich, GermanyJARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, GermanyPGI-7, Forschungszentrum Jülich GmbH, 52425 Jülich, GermanyER-C 1, Forschungszentrum Jülich GmbH, 52425 Jülich, GermanyJARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, GermanyPGI-7, Forschungszentrum Jülich GmbH, 52425 Jülich, GermanyWe here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high miscut, which stabilizes the growth of additional SrO at the bottom interface. We prove the success of this strategy utilizing transmission electron microscopy. We find that these antiphase boundaries significantly influence the resistive switching properties. In particular, devices based on SrTiO3 thin films with intentionally induced antiphase boundaries do not require a forming step, which is ascribed to the existence of preformed filaments.http://dx.doi.org/10.1063/1.5125211
collection DOAJ
language English
format Article
sources DOAJ
author Felix V. E. Hensling
Hongchu Du
Nicolas Raab
Chun-Lin Jia
Joachim Mayer
Regina Dittmann
spellingShingle Felix V. E. Hensling
Hongchu Du
Nicolas Raab
Chun-Lin Jia
Joachim Mayer
Regina Dittmann
Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices
APL Materials
author_facet Felix V. E. Hensling
Hongchu Du
Nicolas Raab
Chun-Lin Jia
Joachim Mayer
Regina Dittmann
author_sort Felix V. E. Hensling
title Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices
title_short Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices
title_full Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices
title_fullStr Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices
title_full_unstemmed Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices
title_sort engineering antiphase boundaries in epitaxial srtio3 to achieve forming free memristive devices
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2019-10-01
description We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high miscut, which stabilizes the growth of additional SrO at the bottom interface. We prove the success of this strategy utilizing transmission electron microscopy. We find that these antiphase boundaries significantly influence the resistive switching properties. In particular, devices based on SrTiO3 thin films with intentionally induced antiphase boundaries do not require a forming step, which is ascribed to the existence of preformed filaments.
url http://dx.doi.org/10.1063/1.5125211
work_keys_str_mv AT felixvehensling engineeringantiphaseboundariesinepitaxialsrtio3toachieveformingfreememristivedevices
AT hongchudu engineeringantiphaseboundariesinepitaxialsrtio3toachieveformingfreememristivedevices
AT nicolasraab engineeringantiphaseboundariesinepitaxialsrtio3toachieveformingfreememristivedevices
AT chunlinjia engineeringantiphaseboundariesinepitaxialsrtio3toachieveformingfreememristivedevices
AT joachimmayer engineeringantiphaseboundariesinepitaxialsrtio3toachieveformingfreememristivedevices
AT reginadittmann engineeringantiphaseboundariesinepitaxialsrtio3toachieveformingfreememristivedevices
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