Smart-cut-like laser slicing of GaN substrate using its own nitrogen

Abstract We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer da...

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Main Authors:	Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Toshiki Yui, Yotaro Wani, Tomomi Aratani, Hirotaka Watanabe, Hadi Sena, Yoshio Honda, Yasunori Igasaki, Hiroshi Amano
Format:	Article
Language:	English
Published:	Nature Publishing Group 2021-09-01
Series:	Scientific Reports
Online Access:	https://doi.org/10.1038/s41598-021-97159-w

id	doaj-be43e2cf600043c59677c0630e8c6dd3
record_format	Article
spelling	doaj-be43e2cf600043c59677c0630e8c6dd32021-09-12T11:24:45ZengNature Publishing GroupScientific Reports2045-23222021-09-011111810.1038/s41598-021-97159-wSmart-cut-like laser slicing of GaN substrate using its own nitrogenAtsushi Tanaka0Ryuji Sugiura1Daisuke Kawaguchi2Toshiki Yui3Yotaro Wani4Tomomi Aratani5Hirotaka Watanabe6Hadi Sena7Yoshio Honda8Yasunori Igasaki9Hiroshi Amano10Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya UniversityElectron Tube Division, Research & Development Department, Hamamatsu Photonics K. K.Electron Tube Division, Research & Development Department, Hamamatsu Photonics K. K.Electron Tube Division, Research & Development Department, Hamamatsu Photonics K. K.Electron Tube Division, Research & Development Department, Hamamatsu Photonics K. K.Electron Tube Division, Research & Development Department, Hamamatsu Photonics K. K.Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya UniversityCenter for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya UniversityCenter for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya UniversityElectron Tube Division, Research & Development Department, Hamamatsu Photonics K. K.Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya UniversityAbstract We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer damaged by laser slicing was about 40 µm. We demonstrated that a standard high quality homoepitaxial layer can be grown on the sliced surface after removing the damaged layer by polishing.https://doi.org/10.1038/s41598-021-97159-w
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Atsushi Tanaka Ryuji Sugiura Daisuke Kawaguchi Toshiki Yui Yotaro Wani Tomomi Aratani Hirotaka Watanabe Hadi Sena Yoshio Honda Yasunori Igasaki Hiroshi Amano
spellingShingle	Atsushi Tanaka Ryuji Sugiura Daisuke Kawaguchi Toshiki Yui Yotaro Wani Tomomi Aratani Hirotaka Watanabe Hadi Sena Yoshio Honda Yasunori Igasaki Hiroshi Amano Smart-cut-like laser slicing of GaN substrate using its own nitrogen Scientific Reports
author_facet	Atsushi Tanaka Ryuji Sugiura Daisuke Kawaguchi Toshiki Yui Yotaro Wani Tomomi Aratani Hirotaka Watanabe Hadi Sena Yoshio Honda Yasunori Igasaki Hiroshi Amano
author_sort	Atsushi Tanaka
title	Smart-cut-like laser slicing of GaN substrate using its own nitrogen
title_short	Smart-cut-like laser slicing of GaN substrate using its own nitrogen
title_full	Smart-cut-like laser slicing of GaN substrate using its own nitrogen
title_fullStr	Smart-cut-like laser slicing of GaN substrate using its own nitrogen
title_full_unstemmed	Smart-cut-like laser slicing of GaN substrate using its own nitrogen
title_sort	smart-cut-like laser slicing of gan substrate using its own nitrogen
publisher	Nature Publishing Group
series	Scientific Reports
issn	2045-2322
publishDate	2021-09-01
description	Abstract We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer damaged by laser slicing was about 40 µm. We demonstrated that a standard high quality homoepitaxial layer can be grown on the sliced surface after removing the damaged layer by polishing.
url	https://doi.org/10.1038/s41598-021-97159-w
work_keys_str_mv	AT atsushitanaka smartcutlikelaserslicingofgansubstrateusingitsownnitrogen AT ryujisugiura smartcutlikelaserslicingofgansubstrateusingitsownnitrogen AT daisukekawaguchi smartcutlikelaserslicingofgansubstrateusingitsownnitrogen AT toshikiyui smartcutlikelaserslicingofgansubstrateusingitsownnitrogen AT yotarowani smartcutlikelaserslicingofgansubstrateusingitsownnitrogen AT tomomiaratani smartcutlikelaserslicingofgansubstrateusingitsownnitrogen AT hirotakawatanabe smartcutlikelaserslicingofgansubstrateusingitsownnitrogen AT hadisena smartcutlikelaserslicingofgansubstrateusingitsownnitrogen AT yoshiohonda smartcutlikelaserslicingofgansubstrateusingitsownnitrogen AT yasunoriigasaki smartcutlikelaserslicingofgansubstrateusingitsownnitrogen AT hiroshiamano smartcutlikelaserslicingofgansubstrateusingitsownnitrogen
_version_	1717755741470720000

Smart-cut-like laser slicing of GaN substrate using its own nitrogen

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