A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization

A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization

In this present work, CuNiCoS4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the success...

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Main Authors: Adem Koçyiğit, Adem Sarılmaz, Teoman Öztürk, Faruk Ozel, Murat Yıldırım
Format: Article
Language:English
Published: Beilstein-Institut 2021-09-01
Series:Beilstein Journal of Nanotechnology
Subjects:
au/cunicos4/p-si device
cunicos4
optoelectronic applications
schottky devices
Online Access:https://doi.org/10.3762/bjnano.12.74
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spelling doaj-bdea4575aa474804bc6ab89825e259c32021-09-13T09:24:22ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862021-09-0112198499410.3762/bjnano.12.742190-4286-12-74A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterizationAdem Koçyiğit0Adem Sarılmaz1Teoman Öztürk2Faruk Ozel3Murat Yıldırım4Department of Electrical Electronic Engineering, Engineering Faculty, Igdir University, 76000 Igdir, TurkeyDepartment of Metallurgical and Materials Engineering, Faculty of Engineering, Karamanoğlu Mehmetbey University, 70200, Karaman, TurkeyDepartment of Physics, Faculty of Science, Selcuk University, 42130, Konya, TurkeyDepartment of Metallurgical and Materials Engineering, Faculty of Engineering, Karamanoğlu Mehmetbey University, 70200, Karaman, TurkeyDepartment of Biotechnology, Faculty of Science, Selcuk University, 42130, Konya, TurkeyIn this present work, CuNiCoS4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS4. The obtained CuNiCoS4 thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS4/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications.https://doi.org/10.3762/bjnano.12.74au/cunicos4/p-si devicecunicos4optoelectronic applicationsschottky devices
collection DOAJ
language English
format Article
sources DOAJ
author Adem Koçyiğit
Adem Sarılmaz
Teoman Öztürk
Faruk Ozel
Murat Yıldırım
spellingShingle Adem Koçyiğit
Adem Sarılmaz
Teoman Öztürk
Faruk Ozel
Murat Yıldırım
A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization
Beilstein Journal of Nanotechnology
au/cunicos4/p-si device
cunicos4
optoelectronic applications
schottky devices
author_facet Adem Koçyiğit
Adem Sarılmaz
Teoman Öztürk
Faruk Ozel
Murat Yıldırım
author_sort Adem Koçyiğit
title A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization
title_short A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization
title_full A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization
title_fullStr A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization
title_full_unstemmed A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization
title_sort au/cunicos4/p-si photodiode: electrical and morphological characterization
publisher Beilstein-Institut
series Beilstein Journal of Nanotechnology
issn 2190-4286
publishDate 2021-09-01
description In this present work, CuNiCoS4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS4. The obtained CuNiCoS4 thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS4/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications.
topic au/cunicos4/p-si device
cunicos4
optoelectronic applications
schottky devices
url https://doi.org/10.3762/bjnano.12.74
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AT ademsarılmaz aaucunicos4psiphotodiodeelectricalandmorphologicalcharacterization
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